Direct measurement of sub-10 nm-level lateral distribution in tunneling-electron luminescence intensity on a cross-sectional 50-nm-thick AlAs layer by using a conductive transparent tip

Applied Physics Letters

Volumn 78, Issue 25, 2001, Pages 3995-3997

  Murashita, Tooru ^a   Tateno, Kouta ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040158796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1380404     Document Type: Article

References (10)

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