Manipulating Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunneling microscope tips

Surface Science

Volumn 600, Issue 17, 2006, Pages 3456-3460

  Nakamura, Yoshiaki ^a,b   Takata, Hiroyuki ^a   Masada, Akiko ^a   Ichikawa, Masakazu ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Field evaporation, nanopatterning; Germanium; Molecular beam epitaxy; Scanning tunneling microscope; Scanning tunneling spectroscopy; Silicon

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; IONS; MOLECULAR BEAM EPITAXY; OXIDES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON; ULTRATHIN FILMS;

EXTRACTION EFFICIENCY; FIELD EVAPORATION; NANOPATTERNING; SCANNING TUNNELING MICROSCOPE; ULTRAHIGH DENSITY;

GERMANIUM COMPOUNDS;

EID: 33748298780     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.06.035     Document Type: Article

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