Quantum-confinement effect in individual Ge1-x Snx quantum dots on Si(111) substrates covered with ultrathin Si O2 films using scanning tunneling spectroscopy

Applied Physics Letters

Volumn 91, Issue 1, 2007, Pages

  Nakamura, Yoshiaki ^a,b   Masada, Akiko ^a   Ichikawa, Masakazu ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATES; ENERGY BAND GAP; QD FLATTENING; QUANTUM LEVELS;

ASPECT RATIO; ENERGY GAP; QUANTUM CONFINEMENT; SCANNING TUNNELING MICROSCOPY; SILICON; ULTRATHIN FILMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 36048979673     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753737     Document Type: Article

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