Spatial resolution of imaging contaminations on the GaAs surface by scanning tunneling microscope-cathodoluminescence spectroscopy

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7737-7741

  Watanabe, Kentaro ^a   Nakamura, Yoshiaki ^a,b   Ichikawa, Masakazu ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Cathodoluminescence; Field emission; GaAs; Scanning tunneling microscopy

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON EMISSION; FIELD EMISSION; III-V SEMICONDUCTORS; IMAGE RESOLUTION; MICROSCOPES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM;

CATHODOLUMINESCENCE SPECTROSCOPY; EMITTED ELECTRON; EXCITATION SOURCES; GAAS; GAAS SURFACES; NONRADIATIVE RECOMBINATION CENTERS; SPATIAL RESOLUTION; SURFACE CONTAMINATIONS;

GALLIUM ARSENIDE;

EID: 51249108890     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.013     Document Type: Article

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