Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 195-200

  Watanabe, Kentaro ^a   Nakamura, Yoshiaki ^b   Ichikawa, Masakazu ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC EXCITATION; OPTICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY; SURFACE TREATMENT;

BAND-EDGE LUMINESCENCE; SI-DOPED GAAS; SPATIAL RESOLUTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 38849126337     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2830640     Document Type: Article

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