NBTI reliability of P-channel transistors with diamond-like carbon liner having ultrahigh compressive stress

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 867-869

  Liu, Bin ^a   Tan, Kian Ming ^a   Yang, Mingchu ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

Diamond like carbon (DLC); Reliability; Strain; Transistor

Indexed keywords

CHANNEL STRAIN; CHANNEL TRANSISTORS; DIAMOND-LIKE CARBON; DIAMOND-LIKE CARBON (DLC); LIFETIME EXTRAPOLATION; NBTI LIFETIME; NEGATIVE BIAS TEMPERATURE INSTABILITY; POWER LAW; STRESS CONDITION; THRESHOLD VOLTAGE SHIFTS; ULTRAFAST MEASUREMENTS;

APPROXIMATION THEORY; COMPRESSIVE STRESS; DIAMONDS; MESFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; RELIABILITY; TENSILE STRESS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 68249135625     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024332     Document Type: Article

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