Electron trapping: An unexpected mechanism of nbti and its implications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 76-77

  Campbell, J P ^a   Cheung, K P ^a   Suehle, J S ^a   Oates, A ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 51949094289     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588568     Document Type: Conference Paper

References (6)

1. M.A. Alam, et al., Microelectronics Rel.,45, p.71 (2005)
2. V. Huard, et al., Microelectronics Rel., 46, p. 1 (2006)
3. D.J. DiMaria, et al., J. Appl. Phys., 89, p. 5015 (2001)
4. K.P. Cheung, et al., P2ID, p. 181 (1997)
5. J.P. Campbell, et al., IRPS (2008) (in press)
6. Y. Nissan-Cohen, et al., J. Appl. Phys., p 2024 (1986)