A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

IEEE Electron Device Letters

Volumn 29, Issue 2, 2008, Pages 192-194

  Tan, Kian Ming ^a   Zhu, Ming ^a   Fang, Wei Wei ^a   Yang, Mingchu ^b   Liow, Tsung Yang ^a   Lee, Rinus T P ^a   Hoe, Keat Mun ^c   Tung, Chih Hang ^c   Balasubramanian, Narayanan ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Contact etch stop layer (CESL); Diamond like carbon (DLC); Enhancement; Pitch; Strain; Stress

Indexed keywords

COMPRESSIVE STRESS; DIAMOND LIKE CARBON FILMS; PERMITTIVITY; STRAIN; THIN FILMS;

CONTACT ETCH STOP LAYER (CESL); HIGH-STRESS FILM; STRAINED P-CHANNEL MOSFET;

MOSFET DEVICES;

EID: 39549098857     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.914103     Document Type: Article

References (14)

1. P. Ranade, T. Ghani, K. Kuhn, K. Mistry, S. Pae, L. Shifren, M. Stettler, K. Tone, S. Tyagi, and M. Bohr, "High performance 35 nm CMOS transistors featuring NiSi metal gate (FUSI), uniaxial strained silicon channels and 1.2 nm gate oxide," in IEDM Tech. Dig., 2005, pp. 4-7.
2. T.-Y. Liow, K.-M. Tan, R. T. P. Lee, A. Du, C.-H. Tung, G. S. Samudra, W.-J. Yoo, N. Balasubramanian, and Y.-C. Yeo, "Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement," in VLSI Symp. Tech. Dig., 2006, pp. 56-57.
3. C.-H. Chen, T. L. Lee, T. H. Hou, C. L. Chen, C. C. Chen, J. W. Hsu, K. L. Cheng, Y. H. Chiu, H. J. Tao, Y. Jin, C. H. Diaz, S. C. Chen, and M. S. Liang, "Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65 nm high performance strained-Si device application," in VLSI Symp. Tech. Dig., 2004, pp. 56-57.
4. A. Oishi, O. Fujii, T. Yokoyama, K. Ota, T. Sanuki, H. Inokuma, K. Eda, T. Idaka, H. Miyajima, S. Iwasa, H. Yamasaki, K. Oouchi, K. Matsuo, H. Nagano, T. Komoda, Y. Okayama, T. Matsumoto, K. Fukasaku, T. Shimizu, K. Miyano, T. Suzuki, K. Yahashi, A. Horiuchi, Y. Takegawa, K. Saki, S. Mori, K. Ohno, I. Mizushima, M. Saito, M. Iwai, S. Yamada, N. Nagashima, and F. Matsuoka, "High performance CMOSFET technology for 45 ran generation and scalability of stress-induced mobility enhancement technique," in IEDM Tech. Dig., 2005, pp. 229-232.
5. L. Washington, F. Nouri, S. Thirupapuliyur, G. Eneman, P. Verheyen, V. Moroz, L. Smith, X. Xu, M. Kawaguchi, T. Huang, K. Ahmed, M. Balseanu, L. Xia, M. Shen, Y. Kim, R. Rooyackers, K.-De Meyer, and R. Schreutelkamp, "PMOSFET with 200% mobility enhancement induced by multiple stressors," IEEE Electron Device Lett., vol. 27, no. 6, pp. 511-513, Jun. 2006.
6. B. Yang, K. Nummy, A. Waite, L. Black, H. Gossmann, H. Yin, Y. Liu, B. Kim, S. Narasimha, P. Fisher, H. V. Meer, J. Johnson, D. Chidambarrao, S. D. Kim, C. Sheraw, D. Wehella-gamage, J. Holt, X. Chen, D. Park, C. Y. Sung, D. Schepis, M. Khare, S. Luning, and P. Agnello, "Stress dependence and poly-pitch scaling characteristics of (1 1 0) PMOS drive current," in VLSI Symp. Tech. Dig., 2007, pp. 126-127.
7. D. Sheeja, B. K. Tay, K. W. Leong, and C. H. Lee, "Effect of film thickness on the stress and adhesion of diamond-like carbon coatings," Diamond Relat. Mater., vol. 11, pp. 1643-1647, Sep. 2002.
8. M. Chhowalla, "Thick, well-adhered, highly stressed tetrahedral amorphous carbon," Diamond Relat. Mater., vol. 10, pp. 1011-1016, Jul. 2001.
9. Y. Komatsu, A. Alanazi, and K. K. Hirakuri, "Application of diamond-like carbon films to the integrated circuit fabrication process," Diamond Relat. Mater., vol. 8, pp. 2018-2021, Nov. 1999.
10. M. Massia, J. M. J. Ocampo, H. S. Maciel, K. Grigorov, C. Otani, L. V. Santos, and R. D. Mansano, "Plasma etching of DLC films formicrofluidic channels," Microelectron. J., vol. 34, pp. 635-638, Aug. 2003.
11. S. Xu, B. K. Tay, H. S. Tan, L. Zhong, Y. Q. Tu, S. R. P. Silva, and W. I. Milne, "Properties of carbon ion deposited tetrahedral amorphous carbon films as a function of ion energy," J. Appl. Phys., vol. 79, pp. 7234-7240, May 1996.
12. P. Mérel, M. Tabbal, M. Chaker, S. Moisa, and J. Margot, "Direct evaluation of the content in diamond-like-carbon films by XPS," Appl. Surf. Sci., vol. 136, pp. 105-110, Oct. 1998.
13. S. Pidin, T. Mori, K. Inoue, S. Fukuta, N. Itoh, E. Mutoh, K. Ohkoshi, R. Nakamura, K. Kobayashi, K. Kawamura, T. Saiki, S. Fukuyama, S. Satoh, M. Kase, and K. Hashimoto, "A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films," in IEDM Tech. Dig., 2004, pp. 213-216.
14. S. E. Thompson, G. Sun, Y. S. Choi, and T. Nishida, "Uniaxial-process-induced strained-Si: Extending the CMOS roadmap," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1010-1020, May 2006.