A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 127-130

  Tan, Kian Ming ^a   Zhu, Ming ^a   Fang, Wei Wei ^a   Yang, Mingchu ^b   Liow, Tsung Yang ^a   Lee, Rinus T P ^a   Hoe, Keat Mun ^c   Tung, Chih Hang ^c   Balasubramanian, N ^c   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND-LIKE CARBON; INTRINSIC STRESSES; LINER STRESSOR;

COMPRESSIVE STRESS; DIAMONDS; ELECTRON DEVICES; PERMITTIVITY; SILICON NITRIDE; TENSILE STRESS; TRANSISTORS;

ELECTRIC LOAD MANAGEMENT;

EID: 47249096503     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418881     Document Type: Conference Paper

References (6)

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5. L. Washington, IEEE Elect. Dev. Lett. 27, pp. 511, 2006.
6. R. Pastorelli et al.., Diamond Relat. Mater., 9, pp.925, 2000.