NBTI effects of pMOSFETs with different nitrogen dose implantation

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 681-682

  Lee, Y J ^a   Tang, Y C ^a   Wu, M H ^a   Chao, T S ^a,b   Ho, P T ^c   Lai, David ^a   Yang, W L ^c   Huang, T Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE STATES; NITROGEN;

DELTA-V; HIGH-NITROGEN; HOT HOLES; NITROGEN DOSE; P-MOSFETS; POSITIVE GATE BIAS; SOURCE/DRAIN EXTENSION;

INTEGRATED CIRCUITS;

EID: 68249153997     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315449     Document Type: Conference Paper

References (7)

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6. N. Kimizuka et al. in VLSI 2000, pp.92
7. C.-T. Sahetal. J. Appl. Phys., 55 1984 p.l525