Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 289-294

  Gowrishankar, Vignesh ^a   Miller, Nathaniel ^a   McGehee, Michael D ^a   Misner, Matthew J ^b   Ryu, Du Yeol ^b   Russell, Thomas P ^b   Drockenmuller, Eric ^c   Hawker, Craig J ^c  

^a Stanford University ^*  (United States)

^b UNIVERSITY OF MASSACHUSETTS   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Block copolymer; High aspect ratio; Lift off; Lithography; Nanopillars; Reactive ion etching

Indexed keywords

ANISOTROPY; BLOCK COPOLYMERS; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; PROCESSING; REACTIVE ION ETCHING; SUBSTRATES;

HIGH-ASPECT-RATIO; LIFT-OFF; NANOPILLARS; PERIODICITY;

SILICON COMPOUNDS;

EID: 33746970959     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.064     Document Type: Article

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