Pulsed CVD-W nucleation layer using WF6 and B2 H 6 for Low Resistivity W

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Kim, Choon Hwan ^a,c   Rho, Il Cheol ^a   Kim, Soo Hyun ^b   Han, Il Keoun ^a   Kang, Hyo Sang ^a   Ryu, Seung Wook ^c   Kim, Hyeong Joon ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Yeungnam University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PERFORMANCE; ADHESION PROPERTIES; AMORPHOUS STRUCTURES; ATOMIC LAYER DEPOSITED; BORON-CONTAINING; BORON-LAYERS; CHEMICAL VAPOR DEPOSITED; DEPOSITION TEMPERATURES; ENERGY-DISPERSIVE SPECTROSCOPY; GRAIN SIZE; GROWTH PER CYCLE; LAYER INTERFACES; LOW RESISTIVITY; MEMORY DEVICE; MODIFIED CHEMICAL VAPOR DEPOSITIONS; NUCLEATION LAYERS; POST TREATMENT; PULSED CVD; SUB-50 NM; X RAY DIFFRACTOMETRY;

ADHESION; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; ATOMS; BORON; BORON COMPOUNDS; DECOMPOSITION; DEPOSITION; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEATION; PHOTODEGRADATION; THICK FILMS; TUNGSTEN; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 68049147158     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3155430     Document Type: Article

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