A comparative study of the atomic-layer-deposited tungsten thin films as nucleation layers for W-plug deposition

Journal of the Electrochemical Society

Volumn 153, Issue 10, 2006, Pages

  Kim, Soo Hyun ^a,c   Kwak, Nohjung ^a   Kim, Jinwoong ^a   Sohn, Hyunchul ^b  

^a Hynix Semiconductor Inc   (South Korea)

^b Yonsei University   (South Korea)

^c ELECTROCHEMICAL SOCIETY   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; RANDOM ACCESS MEMORY; ULTRAHIGH ASPECT RATIO (UHAR); W-PLUG;

CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRODEPOSITION; GRAIN SIZE AND SHAPE; IMPURITIES; NUCLEATION; THIN FILMS;

TUNGSTEN COMPOUNDS;

EID: 33748428322     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2222966     Document Type: Article

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