Tungsten interconnects in the nano-scale regime

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 266-272

  Steinhogl W ^a   Steinlesberger, G ^a   Perrin, M ^a,b   Scheinbacher, G ^a   Schindler, G ^a   Traving, M ^a   Engelhardt, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b CPE LYON   (France)

Author keywords

Damascene process; Interconnects; Resistivity; Size effect; Tungsten

Indexed keywords

ELECTRIC POWER SYSTEM INTERCONNECTION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SCATTERING; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

ELECTRICAL SIZE EFFECTS; TUGSTEN INTERCONNECT STRUCTURES;

ELECTRIC CONDUCTIVITY;

EID: 28044440082     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.033     Document Type: Conference Paper

References (5)

1. G. Steinlesberger, M. Engelhardt, G. Schindler, and W. Steinhögl Solid State Electron. 47 2003 123
2. T. Kodas, and M. Hampden-Smith The Chemistry of Metal 1994 VCH Publishers New York p. 121
3. W. Steinhögl, M. Engelhardt, G. Schindler, G. Steinlesberger, and M. Traving J. Appl. Phys. 97 2005 023706
4. J.E.J. Schmitz Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ULSI Applications 1991 William Andrew Publishing p. 37
5. N. Misawa, and D.K. Ferry Conference Proceedings ULSI-VIII 1993 MRS p. 319