Improvement of adhesion performances of CVD-W films deposited on B2 H6 -based ALD-W nucleation layer

Electrochemical and Solid-State Letters

Volumn 12, Issue 3, 2009, Pages

  Kim, Choon Hwan ^a,c   Rho, Il Cheol ^a   Kim, Soo Hyun ^b   Sohn, Yong Sun ^a   Kang, Hyo Sang ^a   Kim, Hyeong Joon ^c  

^a Hynix Semiconductor Inc   (South Korea)

^b Yeungnam University   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; BORON; BORON COMPOUNDS; DATA STORAGE EQUIPMENT; DIFFUSION BARRIERS; ELECTRODEPOSITION; FILM GROWTH; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILANES; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

ADHESION FAILURES; ADHESION PERFORMANCES; AMORPHOUS STRUCTURES; ATOMIC LAYER DEPOSITED; BARRIER PERFORMANCES; BORON PENETRATIONS; DEPOSITION CONDITIONS; DIFFUSION BARRIER MATERIALS; GLUE LAYERS; LOW RESISTIVITIES; NUCLEATION LAYERS; SECONDARY IONS;

CHEMICAL VAPOR DEPOSITION;

EID: 58149481901     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3056376     Document Type: Article

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