Phase and microstructure of ALD-W films deposited using B2H 6 and WF6 and their effects on CVD-W growth

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Kim, Soo Hyun ^a,d   Yeom, Seung Jin ^b   Kwak, Nohjung ^b   Sohn, Hyunchul ^c  

^a Yeungnam University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Yonsei University   (South Korea)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FLOW RATE; MICROSTRUCTURE; PHASE INTERFACES; X RAY DIFFRACTION ANALYSIS;

DEPOSITION TEMPERATURE; FILMS DEPOSITION; FINAL GRAIN SIZE; MINIMUM RESISTIVITY;

FILM GROWTH;

EID: 37549009922     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2815962     Document Type: Article

References (21)

1. S. M. Rossnagel, I. C. Noyan, and C. Cabral, Jr., J. Vac. Sci. Technol. B, 20, 2047 (2002).
2. J. M. E. Harper and K. P. Rodbell, J. Vac. Sci. Technol. B, 15, 763 (1997).
3. H. Wang, A. Tiwari, X. Zhang, A. Kvit, and J. Narayan, Appl. Phys. Lett., 81, 1453 (2002).
4. K.-L. Oh, M.-S. Yu, R.-Q. Hsu, and M.-H. Lin, J. Vac. Sci. Technol. B, 23, 229 (2005).
5. N. Kumar, J. T. McGinn, K. Pourrezaei, B. Lee, and E. C. Douglas, J. Vac. Sci. Technol. A, 6, 1602 (1988).
6. B. Gittleman and K. Kozaczek, Characterization and Metrology for ULSI Technology 2005, D. G. Seiler, A. C. Diebold, R. McDonald, C. R. Ayre, R. P. Khosla, S. Zollner, and, E. M. Secula, Editors, AIP Conf. Proc. no. 788, American Institute of Physics, p. 615 (2005).
7. S. Yoo, Y.-H. Kim, and C. S. Yoon, J. Vac. Sci. Technol. B, 19, 856 (2001).
8. G. Ramanath, H. Kim, H. S. Goindi, M. J. Frederick, C.-S. Shin, R. Goswami, I. Petrov, and J. E. Greene, Stress-Induced Phenomena in Metallization: Sixth International Workshop, S. P. Baker, M. A. Korhonen, E. Arzt, and, P. S. Ho, Editors, AIP Conf. Proc. no. 612, American Institute of Physics, p. 10 (2002).
9. D. H. Suh and J. Lee, J. Electrochem. Soc., 151, G618 (2004).
10. H. Shang, M. H. White, K. W. Guarini, P. Solomon, E. Cartier, F. R. McFeely, J. J. Yurkas, and W.-C. Lee, Appl. Phys. Lett., 78, 3139 (2001).
11. J. E. J. Schmitz, Chemical Vapor Deposition of Tungsten and Tungsten Silicides, Noyes, Park Ridge, NJ (1991).
12. S.-H. Kim, N. Kwak, J. Kim, and H. Sohn, J. Electrochem. Soc., 153, G887 (2006).
13. S. M. Rossnagel and T. S. Kuan, J. Vac. Sci. Technol. B, 22, 240 (2004).
14. S.-H. Kim, J.-T. Kim, N. Kwak, J. Kim, T.-S. Yoon, and H. Sohn, J. Vac. Sci. Technol. B, 25, 1574 (2007).
15. R. S. Wagner, A. K. Sinha, T. T. Sheng, H. H. Levinstein, and F. B. Alexander, J. Vac. Sci. Technol., 11, 582 (1974).
16. Y. G. Shen, Y. W. Mai, Q. C. Zhang, D. R. Mckenzie, W. D. McFall, and W. E. McBride, J. Appl. Phys., 87, 117 (2000).
17. S.-H. Kim, E.-S. Hwang, S.-H. Pyi, H.-J. Sun, J.-W. Lee, J.-K. Kim, N. Kawk, H. Sohn, and J. Kim, J. Electrochem. Soc., 152, C408 (2005).
18. C. V. Thomson, Annu. Rev. Mater. Sci., 30, 159 (2000).
19. I. Petrov, P. B. Barna, L. Hultman, and J. E. Greene, J. Vac. Sci. Technol. A, 21, S117 (2003).
20. M. Ohring, The Materials Science of Thin Films, Chap., Academic Press, New York (1992).
21. C. V. Thomson, J. Mater. Res., 14, 3164 (1999).