Pulsed anodization for control of porosity gradients and interface roughness in porous silicon

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  James, T D ^a   Keating, A J ^a   Parish, G ^a   Musca, C A ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATIONS; DISSOLUTION KINETICS; DOPED SUBSTRATES; DUTY CYCLES; FILM FORMATIONS; GALVANOSTATIC TECHNIQUES; INHOMOGENEITIES; INTERFACE ROUGHNESS; LOW DUTY-CYCLES; LOW FREQUENCY; MULTI-STEP; POROSITY GRADIENTS; PULSE TRAIN; PULSING FREQUENCIES; THIN FILM FABRICATION; THIN-FILM PROPERTIES;

DISSOLUTION; POROSITY; POROUS SILICON; THIN FILM DEVICES;

SILICON WAFERS;

EID: 68049147075     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3174319     Document Type: Article

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