Flat layered structure and improved photoluminescence emission from porous silicon microcavities formed by pulsed anodic etching

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 6, 2002, Pages 807-811

  Xiong, Z H ^a   Liao, L S ^a   Ding, X M ^a   Xu, S H ^a   Liu, Y ^a   Gu, L L ^a   Tao, F G ^a   Lee, S T ^b   Hou, X Y ^a  

^a FUDAN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; ELECTROCHEMISTRY; ETCHING; INTERFACES (MATERIALS); LASER BEAMS; LIGHT EMISSION; OPTIMIZATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; STRUCTURE (COMPOSITION);

BRAGG REFLECTORS; POROUS SILICON MICROCAVITIES; PULSED ANODIC ETCHING; PULSED CURRENT ETCHING;

POROUS SILICON;

EID: 0036604379     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100977     Document Type: Article

References (18)