Systematic study on pulse parameters in fabricating porous silicon-layered structures by pulse electrochemical etching

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 925-928

  Ge, J ^a   Yin, W J ^a   Ma, L L ^a   Obbard, E ^a   Ding, X M ^a   Hou, X Y ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

POROSITY; POROUS SILICON; REFLECTION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

DUTY CYCLE; POROUS SILICON LAYERED STRUCTURES; PULSE ELECTROCHEMICAL ETCHING; PULSE PARAMETERS;

ELECTROCHEMICAL ETCHING;

EID: 34547487334     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/017     Document Type: Article

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