Effect of SiO2 Tunnel oxide thickness on electron tunneling mechanism in Si nanocrystal dots floating-gate memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 3997-3999

  Punchaipetch, Prakaipetch ^a   Ichikawa, Kazunori ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Takahashi, Eiji ^b   Hayashi, Tsukasa ^b   Ogata, Kiyoshi ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Floating gate memory; MOSFETs; Si nanocrystal dots; Side wall PECVD

Indexed keywords

CHARACTERIZATION; ELECTRODES; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS;

FLOATING-GATE MEMORY; SI NANOCRYSTAL DOTS; SIDE-WALL PECVD;

SILICA;

EID: 33646865936     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3997     Document Type: Article

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