Control of electronic charged states of Si-based quantum dots for floating gate application

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 41-44

  Miyazaki, S ^a   Makihara, K ^a   Ikeda, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Coulomb interaction; Doped quantum dots; Floating gate memory; Germanium core; Multi valued memory; Quantum dots; Silicon dots

Indexed keywords

ARCHITECTURAL DESIGN; ATOMS; DIELECTRIC DEVICES; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; INJECTION (OIL WELLS); MOS CAPACITORS; MOSFET DEVICES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

DOPED QUANTUM DOTS; FLOATING GATE MEMORY; MULTI-VALUED MEMORY; QUANTUM DOTS; SILICON DOTS;

SEMICONDUCTING SILICON;

EID: 54949123784     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.101     Document Type: Article

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