Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Ioannou Sougleridis, V ^a   Dimitrakis, P ^a   Vamvakas, V Em ^a   Normand, P ^a   Bonafos, C ^b   Schamm, S ^b   Cherkashin, N ^b   Ben Assayag, G ^b   Perego, M ^c   Fanciulli, M ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b CEMES CNRS   (France)

^c LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRAPOLATED MEMORY; LOW-TEMPERATURE WET OXIDATION; OXIDE-NITRIDE-OXIDE MEMORY STACKS;

DIELECTRIC MATERIALS; EXTRAPOLATION; ION IMPLANTATION; NITRIDES; OXIDATION; SEMICONDUCTING SILICON;

OXIDE FILMS;

EID: 34547372489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752769     Document Type: Article

References (12)

1. C. Y. Lu, T. C. Lu, and R. Liu, Proceedings of the 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, July 2006, p. 18.
2. M. H. White, Y. Wang, S. J. Wrazien, and Y. Zhao, Int. J. High Speed Electron. Syst. 16, 479 (2006).
3. R. van Schaijk, M. Slotboom, M. van Duuren, D. Dormans, N. Akil, R. Beurze, F. Neuilly, W. Baks, A. H. Miranda, and P. G. Tello, Solid-State Electron. 49, 1849 (2006).
4. L. U. T. Ogbuli and D. T. Jayne, J. Electrochem. Soc. 140, 759 (1993).
5. H. Du, R. E. Tressler, and K. E. Spear, J. Electrochem. Soc. 136, 3210 (1989).
6. E. Suzuki, Y. Hayashi, K. Ishii, and T. Tsuchiya, Appl. Phys. Lett. 42, 608 (1982).
7. M. Saraf, R. Edrei, R. Akhvlediani, Y. Roizin, R. Shima-Edelstein, and A. Hoffman, 24, 1716 (2006).
8. V. Ioannou-Sougleridis, P. Dimitrakis, V. Em. Vamvakas, P. Normand, C. Bonafos, S. Schamm, A. Mouti, G. Ben Assayag, and V. Paillard, Nanotechnology 18, 215204 (2007).
9. C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. Ben Assayag, A. Claverie, T. Muller, K. H. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis, and P. Normand, J. Appl. Phys. 95, 5696 (2004).
10. P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, D. Tsoukalas, C. Bonafos, G. Ben Assayag, N. Cherkashin, A. Claverie, J. A. Van Den Berg, V. Soncini, A. Agarwal, M. Ammen, M. Perego, and M. Fanciulli, Nucl. Instrum. Methods Phys. Res. B 216, 228 (2004).
11. S. Y. Wang, H. T. Lue, E. K. Lai, L. W. Yang, J. Gong, K. C. Chen, K. Y. Hsieh, J. Ku, and C. Y. Lu, Solid-State Electron. 50, 1171 (2006).
12. M. Petersen and Y. Roizin, Appl. Phys. Lett. 89, 053511 (2006).