Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 2910-2915

  Luo, P Q ^a   Zhou, Z B ^a   Chan, K Y ^b   Tang, D Y ^a   Cui, R Q ^a   Dou, X M ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b MULTIMEDIA UNIVERSITY   (Malaysia)

Author keywords

Boron; Gas doping ratio; Hot wire chemical vapor deposition; HWCVD; nc Si:H

Indexed keywords

BORON; BORON COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DEPOSITION RATES; ENERGY GAP; HYDROGENATION; NANOCRYSTALS; OPTICAL CORRELATION; SEMICONDUCTOR DOPING; THIN FILMS; WIRE;

CRYSTALLINE VOLUME FRACTION; GAS DOPING RATIO; HOT WIRE CHEMICAL VAPOR DEPOSITION; HWCVD; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); HYDROGENATED NANOCRYSTALLINE SILICON THIN FILM; LARGE-AREA OPTOELECTRONICS; NC-SI:H;

NANOCRYSTALLINE SILICON;

EID: 57049089476     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.08.038     Document Type: Article

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