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Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 347-351

The change of transport mechanism in μc-Si:H films induced by H2-diluted silane plasma

(7) Huang, Shaoyun a Wang, Li a Ganguly, Gautam b,c Xu, Jun a Huang, Xinfan a Matsuda, Akihisa b Chen, Kunji a

a NANJING UNIVERSITY (China)

b ELECTROTECHNICAL LABORATORY (Japan)

c BP EXPLORATION (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005401190 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-3093(00)00045-4 Document Type: Article

Times cited : (10)

References (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.