Evaluation of microstructures and carrier transport behaviors during the transition process from amorphous to nanocrystalline silicon thin films

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Song, C ^a   Chen, G R ^a   Xu, J ^a   Wang, T ^a   Sun, H C ^a   Liu, Y ^a   Li, W ^a   Ma, Z Y ^a   Xu, L ^a   Huang, X F ^a   Chen, K J ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANNEALING; CARRIER TRANSPORT; FOURIER TRANSFORMS; GRAIN BOUNDARIES; HYDROGEN; INFRARED SPECTROSCOPY; MICROSTRUCTURE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

AMORPHOUS SI; AMORPHOUS SI FILMS; AMORPHOUS SILICON FILMS; ANNEALING TEMPERATURES; BONDING CONFIGURATIONS; CARRIER TRANSPORT CHARACTERISTICS; CONDUCTION PATHS; DEFECT STATE; FOURIER-TRANSFORM INFRARED SPECTROSCOPIES; HIGH-TEMPERATURE ANNEALING; NANO-CRYSTALLINE SI; NANO-CRYSTALLINE SILICON THIN FILMS; NANO-CRYSTALLINE STRUCTURES; NANOCRYSTALLINE PHASIS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; RAMAN SCATTERING SPECTROSCOPIES; SI FILMS; TEMPERATURE-DEPENDENT CONDUCTIVITIES; THREE-PHASE MODELS; TRANSITION PROCESS; TRANSPORT BEHAVIORS; TRANSPORT PROCESS;

AMORPHOUS FILMS;

EID: 62549096841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3087500     Document Type: Article

References (36)

1. G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.47.1480 47, 1480 (1981).
2. T. Datta and J. A. Woollam, Phys. Rev. B 0163-1829 10.1103/PhysRevB.39. 1953 39, 1953 (1989).
3. J. Koh, H. Fujiwara, R. W. Collins, Y. Lee, and C. R. Wronski, J. Non-Cryst. Solids 227-230, 73 (1998). 0022-3093
4. N. Yoshida, Y. Shimizu, T. Honda, T. Yokoi, and S. Nonomura, J. Non-Cryst. Solids 0022-3093 10.1016/j.jnoncrysol.2007.10.039 354, 2164 (2008).
5. S. K. O'Leary and S. M. Malik, J. Appl. Phys. 0021-8979 10.1063/1.1504174 92, 4276 (2002).
6. C. H. Lee, A. Sazanov, and A. Nathan, Appl. Phys. Lett. 0003-6951 10.1063/1.1942641 86, 222106 (2005).
7. D. Stieler, V. L. Dalal, K. Muthukrishnan, M. Noack, and E. Schares, J. Appl. Phys. 0021-8979 10.1063/1.2234545 100, 036106 (2006).
8. T. Su, T. Ju, B. Yan, J. Yang, S. Guha, and P. C. Taylor, J. Non-Cryst. Solids 0022-3093 10.1016/j.jnoncrysol.2007.10.041 354, 2231 (2008).
9. K. Sato and K. Hirakuri, J. Appl. Phys. 0021-8979 10.1063/1.2399933 100, 114303 (2006).
10. Z. Cen, J. Xu, Y. Liu, W. Li, L. Xu, Z. Ma, X. Huang, and K. Chen, Appl. Phys. Lett. 0003-6951 10.1063/1.2362577 89, 163107 (2006).
11. M. Wang, K. Chen, L. He, W. Li, J. Xu, and X. Huang, Appl. Phys. Lett. 0003-6951 10.1063/1.121782 73, 105 (1998).
12. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nature Mater. 1476-1122 10.1038/nmat1307 4, 143 (2005).
13. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. Crabb́, and K. Chan, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996).
14. B. D. Salvo, G. Ghibaudo, P. Luthereau, T. Baron, B. Guillaumot, and G. Reimbold, Solid-State Electron. 0038-1101 10.1016/S0038-1101(01)00070-3 45, 1513 (2001).
15. H. Fritzsche and K. J. Chen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.28. 4900 28, 4900 (1983).
16. K. Chen and H. Fritzsche, J. Non-Cryst. Solids 59-60, 441 (1983).
17. S. Huang, L. Wang, G. Ganguly, J. Xu, X. Huang, A. Matsuda, and K. Chen, J. Non-Cryst. Solids 266-269, 347 (2000). 0022-3093
18. S. Veprek, F. A. Sarott, and Z. Iqbal, Phys. Rev. B 0163-1829 10.1103/PhysRevB.36.3344 36, 3344 (1987).
19. H. S. Mavi, A. K. Shukla, S. C. Abbi, and K. P. Jain, J. Appl. Phys. 0021-8979 10.1063/1.343723 66, 5322 (1989).
20. Y. He, Y. Wei, G. Zheng, M. Yu, and M. Liu, J. Appl. Phys. 0021-8979 10.1063/1.365656 82, 3408 (1997).
21. D. Das and K. Bhattacharya, J. Appl. Phys. 0021-8979 10.1063/1.2384812 100, 103701 (2006).
22. W. S. Wei, G. Y. Xu, J. L. Wang, and T. M. Wang, Vacuum 0042-207X 10.1016/j.vacuum.2006.09.006 81, 656 (2007).
23. S. Gupta, R. S. Katiyar, G. Morell, and S. Z. Weisz, Appl. Phys. Lett. 0003-6951 10.1063/1.125155 75, 2803 (1999).
24. R. L. C. Vink, G. T. Barkema, and W. F. van der Weg, Phys. Rev. B 0163-1829 10.1103/PhysRevB.63.115210 63, 115210 (2001).
25. A. Nakajima, Y. Sugita, K. Kawamura, H. Tomita, and N. Yokoyama, J. Appl. Phys. 0021-8979 10.1063/1.363359 80, 4006 (1996).
26. G. S. Sunatori and A. A. Berezin, J. Appl. Phys. 0021-8979 10.1063/1.333310 55, 3125 (1984).
27. A. K. Ghosh, T. McMahon, E. Rock, and H. Wiesmann, J. Appl. Phys. 0021-8979 10.1063/1.326333 50, 3407 (1979).
28. A. J. Lewis, G. A. N. Connell, W. Paul, J. R. Pawlik, and R. J. Temkin, Proceedings of the International Conference on Tetrahedrally Bonded Amorphous Semiconductors (American Institute of Physics, New York, 1974), p. 27.
29. J. Jang and S. C. Kim, J. Appl. Phys. 0021-8979 10.1063/1.338016 61, 2092 (1987).
30. J. Wei and S. Lee, J. Appl. Phys. 0021-8979 10.1063/1.357847 76, 1033 (1994).
31. W. Paul and D. A. Anderson, Sol. Energy Mater. 5, 229 (1981).
32. J. O. Orwa, J. M. Shannon, R. G. Gateru, and S. R. P. Silva, J. Appl. Phys. 0021-8979 10.1063/1.1834710 97, 023519 (2005).
33. K. Shimakawa, J. Non-Cryst. Solids 266-269, 223 (2000). 0022-3093
34. S. Grebner, F. Wang, and R. Schwarz, Mater. Res. Soc. Symp. Proc. 283, 513 (1993).
35. F. Liu, M. Zhu, Y. Feng, Y. Han, J. Liu, S. Kasouitand, and R. Vanderhaghen, J. Non-Cryst. Solids 299-302, 385 (2002). 0022-3093
36. F. Demtchelis, C. F. Pirri, and E. Tresso, Philos. Mag. B 67, 331 (1993). 1364-2812