Roles of hydrogen dilution on the microstructural and optoelectronic properties of B-doped nanocrystalline Si:H thin films

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 3961-3967

  Gullanar, M H ^a   Chen, H ^a   Wei, W S ^b   Cui, R Q ^a   Shen, W Z ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b BEIHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); GRAIN SIZE AND SHAPE; HYDROGEN; LIGHT ABSORPTION; LIGHT TRANSMISSION; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON; X RAY DIFFRACTION;

ELASTIC RECOIL DETECTION ANALYSIS (ERDA); GLASS SUBSTRATES; OPTICAL BAND GAP; TEMPERATURE-DEPENDENT DARK CONDUCTIVITY;

THIN FILMS;

EID: 2342614712     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1664028     Document Type: Article

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