Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition

Nanotechnology

Volumn 20, Issue 29, 2009, Pages

  Kim, Un Jeong ^a   Lee, Eun Hong ^a   Kim, Jong Min ^a   Min, Yo Sep ^b   Kim, Eunseong ^c   Park, Wanjun ^d  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Konkuk University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; GATE VOLTAGES; IR SPECTROSCOPY; NANOTUBE NETWORKS; NANOTUBE TRANSISTORS; ON/OFF RATIO; OPTICAL ANALYSIS; PERCOLATION THRESHOLDS; PREFERENTIAL GROWTH; RANDOM NETWORK; SEMI-CONDUCTING NANOTUBES; SINGLE-WALLED CARBON NANOTUBE NETWORKS;

CARBON NANOTUBES; DEPOSITION; ELECTRIC POTENTIAL; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR GROWTH; SOLVENTS; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES; WATER VAPOR;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

SINGLE WALLED NANOTUBE; WATER;

ARTICLE; CONDUCTANCE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; FILM; INFRARED SPECTROSCOPY; LOW TEMPERATURE; POLARIMETRY; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SEMICONDUCTOR; TRANSPORT KINETICS; VAPOR;

EID: 67651152875     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/29/295201     Document Type: Article

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