Vertically aligned carbon-nanotube arrays showing schottky behavior at room temperature

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Volumn 1, Issue 5, 2005, Pages 553-559

  Jung, Seung Ho ^a   Jeong, Soo Hwan ^b   Kim, Sang Uck ^a   Hwang, Sun Kyu ^a   Lee, Pyung Soo ^a   Lee, Kun Hong ^a   Ko, Ju Hye ^c   Bae, Eunju ^c   Kang, Donghun ^c   Park, Wanjun ^c   Oh, Hwangyou ^d   Kim, Ju Jin ^d   Kim, Hyungseok ^a   Park, Chan Gyung ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Kyungpook National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Chonbuk National University   (South Korea)

Author keywords

Anodization; Carbon nanotubes; Electrical properties; Template synthesis; Transistors

Indexed keywords

ANODIC OXIDATION; ARRAYS; ELECTRODES; NIOBIUM; SCHOTTKY BARRIER DIODES; SILICON WAFERS; SYNTHESIS (CHEMICAL); THIN FILMS; TRANSISTORS;

ANODIZATION; ELECTRICAL PROPERTIES; SCHOTTKY BEHAVIOR; TEMPLATE SYNTHESIS;

CARBON NANOTUBES;

ALUMINUM; CARBON; CARBON NANOTUBE; NANOPARTICLE; NIOBIUM; OXIDE; SILICON;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; ELECTRODE; ELECTRONICS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM; CARBON; ELECTROCHEMISTRY; ELECTRODES; ELECTRONICS; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; NANOTECHNOLOGY; NANOTUBES, CARBON; NIOBIUM; OXIDES; SILICON; TEMPERATURE; TRANSISTORS;

EID: 33745451449     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200400114     Document Type: Article

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