An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors

Journal of Applied Physics

Volumn 72, Issue 2, 1992, Pages 766-772

  Luan, Shengwen ^a   Neudeck, Gerold W ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645607953     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.351809     Document Type: Article

References (12)