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Volumn 557, Issue , 1999, Pages 13-18

The role of H in the growth mechanism of PECVD a-Si:H

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); HYDROGENATION; MATHEMATICAL MODELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TEMPERATURE;

EID: 0033298868     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (9)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.