Direct insertion of (formula presented) radicals into strained si-si surface bonds during plasma deposition of hydrogenated amorphous silicon films

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 8, 1999, Pages 5791-5798

  von Keudell, Achim ^a   Abelson, J R ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001356173     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.5791     Document Type: Article

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