Scaling behavior and mechanism of formation of Si O2 thin films grown by plasma-enhanced chemical vapor deposition

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 7, 2007, Pages

  Yanguas Gil, A ^a,b   Cotrino, J ^a   Walkiewicz Pietrzykowska, A ^a   Gonzalez Elipe A R ^a  

^a UNIVERSITY OF SEVILLE   (Spain)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34547838363     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.075314     Document Type: Article

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