Growth-front roughening in amorphous silicon films by sputtering

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 8, 2001, Pages

  Karabacak, T ^a   Zhao, Y P ^a   Wang, G C ^a   Lu, T M ^a  

^a Research Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CORRELATION FUNCTION; DIFFUSION; FILM; HYPOBARISM; MAGNETISM; MATHEMATICAL MODEL; SIMULATION; SURFACE PROPERTY; SYSTEM ANALYSIS;

EID: 0035880822     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.085323     Document Type: Article

References (25)

1. F. Family and T. Vicsek, Dynamics of Fractal Surfaces (World Scientific, Singapore, 1991).
2. A.-L. Barabási and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, England, 1995).
3. P. Meakin, Fractals, Scaling, and Growth Far from Equilibrium (Cambridge University Press, Cambridge, England, 1998).
4. J T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, Phys. Rev. B61, 3012 (2000).
5. J T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang, Phys. Rev. B62, 2118 (2000).
6. H.-N. Yang, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Phys. Rev. Lett.76, 3774 (1996).
7. M. Lütt, J P. Schlomka, M. Tolan, J. Stettner, O H. Seeck, and W. Press, Phys. Rev. B56, 4085 (1996).
8. T. Yoshinobu, A. Iwamoto, K. Sudoh, and H. Iwasaki, in Fractal Aspects of Materials, edited by F. Family, P. Meakin, B. Sapoval, and R. Wool,Mater. Res. Soc. Symp. Proc.367 (Materials Research Society, Pittsburgh, 1995), p. 329.
9. D J. Eaglesham and G H. Gilmer, in Proceedings of the Workshop on Surface Disordering: Growth, Roughening, and Phase Transitions, edited by R. Jullien, J. Kertesz, P. Meakin, and D. E. Wolf (Nova Science, New York, 1992), p. 69.
10. H.-N. Yang, G.-C. Wang, and T.-M. Lu, Phys. Rev. Lett.73, 2348 (1994).
11. P H. Hegeman, H J W. Zandvliet, G A M. Kip, and A. van Silfhout, Surf. Sci.311, L655 (1994).
12. O P. Karpenko, S M. Yalisove, and D J. Eaglesham, J. Appl. Phys.82, 1157 (1997).
13. T. Unagami, A. Lousa, and R. Messier, Jpn. J. Appl. Phys., Part 236, L737 (1997).
14. G F. Feng, M. Katiyar, Y H. Yang, J R. Abelson, and N. Maley, in Microcrystalline Semiconductors: Materials Science & Devices, edited by P. M. Fauchet, C. C. Tsai, L. T. Canham, I. Shimizu, and Y. Aoyagi,Mater. Res. Soc. Symp. Proc.283 (Materials Research Society, Pittsburgh, 1993), p. 501.
15. T.-M. Lu, H.-N. Yang, and G.-C. Wang, in Fractal Aspects of Materials (Ref. 8) p. 283.
16. Y.-P. Zhao, G.-C. Wang, and T.-M. Lu, Characterization of Amorphous and Crystalline Rough Surfaces: Principles and Applications (Academic Press, San Diego, 2000).
17. J. Aue and J. Th. M. De Hosson, Appl. Phys. Lett.71, 1347 (1997).
18. R P U. Karunasiri, R. Bruinsma, and J. Rudnick, Phys. Rev. Lett.62, 788 (1989).
19. J.-H. Yao and H. Guo, Phys. Rev. E47, 1007 (1993).
20. K. Wasa and S. Hayakawa, Handbook of Sputter Deposition Technology (Noyes Publications, Park Ridge, NJ, 1992), Chap. 3.
21. T S. Cale and V. Mahadev, in Modeling of Film Deposition for Microelectronic Applications, Thin Films, Vol. 22, edited by S. Rossnagel and A. Ulman (Academic, San Diego, 1996), p. 175.
22. Z. He, S. Inoue, G. Carter, H. Kheyrandish, and J S. Colligon, Thin Solid Films260, 32 (1995).
23. We used a molecular-dynamics code Simulation Kit Version 2.3 written by M. A. Karolewski at Nanyang Technological University, Singapore. Also, D. N. Ruzic from University of Illinois at Urbana-Champaign suggested similar sticking coefficients in our private communications.
24. R F. Bunshah and R S. Juntz, J. Vac. Sci. Technol.9, 1404 (1972).
25. T. Karabacak, Y.-P. Zhao, G.-C. Wang, and T.-M. Lu (unpublished).