Photoluminescence from localized states in disordered indium nitride

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Bansal, Bhavtosh ^a,b   Kadir, Abdul ^c   Bhattacharya, Arnab ^c   Moshchalkov, V V ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

FINANCIAL DATA PROCESSING; LIGHT EMISSION; LUMINESCENCE; MAGNETIC FIELDS; NITRIDES; PHOTOLUMINESCENCE; WAVE FUNCTIONS;

AMERICAN INSTITUTE OF PHYSICS (AIP); DIAMAGNETIC SHIFTS; GAUSSIAN SPECTRUM; HIGH MAGNETIC FIELDS; INDIUM NITRIDE (INN); LOCALIZED STATES; LOW-TEMPERATURE EMISSION; PHOTO-EXCITED CARRIERS; PHOTOLUMINESCENCE (PL) SPECTRUM; PHOTOLUMINESCENCE PEAKS; SPATIAL EXTENT; STRENGTH (IGC: D5/D6); TEMPERATURE DEPENDENCES;

EMISSION SPECTROSCOPY;

EID: 47549108437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959185     Document Type: Article

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