Positive bias temperature instability effects in Advanced high-k / metal gate NMOSFETs

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2008, Pages 55-57

  Ioannou, D P ^a   Mittl, S ^a   Larosa, G ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64549137931     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2008.4796085     Document Type: Conference Paper

References (8)

1. S. Zafar et al., IEEE T-DMR 5, 45 (2005).
2. G. Ribes et al, IEEE T-DMR 5, 5 (2005).
3. R. Choi et al., IEEE EDL 26, 197 (2005).
4. K. Onishi et al., IEEE T-ED 50, 1517 (2003).
5. G. Reimbold et al., MR 47, 489 (2007).
6. N. Sa et al., IEEE EDL 26, 610 (2005).
7. CD. Young et al., in lRPS (2006), pp. 169-173.
8. B. Kaczer et al., in IRPS (2008), pp. 20-27.