Study on the temperature effects of Al2O3 gate pH-ISFET

Sensors and Actuators, B: Chemical

Volumn 81, Issue 2-3, 2002, Pages 152-157

  Chou, Jung Chuan ^a   Weng, Chen Yu ^a   Tsai, Hsjian Ming ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

a Si:H gate pH ISFET; Al2O3 gate pH ISFET; Temperature coefficient; Temperature effect; Zero temperature coefficient point

Indexed keywords

ALUMINA; ELECTRIC POTENTIAL; GATES (TRANSISTOR); PH EFFECTS; THERMAL EFFECTS;

ION-SENSITIVE FIELD EFFECT TRANSISTORS (ISFET);

FIELD EFFECT TRANSISTORS;

EID: 0037021775     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00945-5     Document Type: Article

References (20)

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6. 3/electrolyte interface
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9. Ion-sensing devices with silicon nitride and borosilicate glass insulators
10. 4-gate pH-ISFETs
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12. 5 sensing membrane for low drift and high sensitivity pH-ISFET
13. 5
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15. pzc and surface potential of tin oxide gate ISFET
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17. ISFET integrated sensor technology
18. Temperature effect of A-Si:H pH-ISFET
19. Simulation of time dependent effects of pH-ISFETs