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Volumn 45, Issue 4 B, 2006, Pages 3807-3810

Thickness effects on pH response of HfO2 sensing dielectric improved by rapid thermal annealing

Author keywords

EIS; Hafnium oxide; pH sensitivity; RTA; Thickness

Indexed keywords

DIELECTRIC DEVICES; PH EFFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; SPUTTER DEPOSITION; THICKNESS CONTROL;

ELECTROLYTE INSULATOR SEMICONDUCTOR (EIS); HAFNIUM OXIDE; HYDROGEN ION SENSING; PH SENSITIVITY;

HAFNIUM COMPOUNDS;

EID: 33646907945 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3807 Document Type: Article

Times cited : (28)

References (14)

1
- 51349120096
- C. S. Lai, C. M. Yang, T. F. Lue, H. P. Ko, C. E. Lue, C. Y. Wang and T. M. Wang: IEEE ICSE Proc., 2004, p. 569.
- (2004) IEEE ICSE Proc. , pp. 569
- Lai, C.S.¹ Yang, C.M.² Lue, T.F.³ Ko, H.P.⁴ Lue, C.E.⁵ Wang, C.Y.⁶ Wang, T.M.⁷

2
- 0002245828
- T. Mastsuo and M. Esashi: Sens. Actuators 1 (1981) 77.
- (1981) Sens. Actuators , vol.1 , pp. 77
- Mastsuo, T.¹ Esashi, M.²

3
- 0036818938
- S. S. Jan, Y. C. Chen, J. C. Chou, C. C. Cheng and C. T. Lu: Jpn. J. Appl. Phys. 41 (2002) 6297.
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 6297
- Jan, S.S.¹ Chen, Y.C.² Chou, J.C.³ Cheng, C.C.⁴ Lu, C.T.⁵

4
- 0028195438
- L. Bousse, S. Mostarshed, B. V. D. School and N. F. D. Rooij: Sens. Actuators B 17(1994) 157.
- (1994) Sens. Actuators B , vol.17 , pp. 157
- Bousse, L.¹ Mostarshed, S.² School, B.V.D.³ Rooij, N.F.D.⁴

5
- 0025430129
- L. Bousse, H. H. V. D. Vlekkert and N. F. D. Rooij: Sens. Actuators B 2 (1990) 103.
- (1990) Sens. Actuators B , vol.2 , pp. 103
- Bousse, L.¹ Vlekkert, H.H.V.D.² Rooij, N.F.D.³

6
- 0031250705
- T. Mikolajick, R. Kuhnhold and H. Ryssel: Sens. Actuators B 44 (1997) 262.
- (1997) Sens. Actuators B , vol.44 , pp. 262
- Mikolajick, T.¹ Kuhnhold, R.² Ryssel, H.³

7
- 0036478461
- J. L. Chiang, Y. C. Chen, J. C. Chou and C. C. Cheng: Jpn. J. Appl. Phys. 41 (2002) 541.
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 541
- Chiang, J.L.¹ Chen, Y.C.² Chou, J.C.³ Cheng, C.C.⁴

8
- 0031519544
- A. Garde, J. Alderman and W. Lane: Sens. Mater. 9 (1997) 15.
- (1997) Sens. Mater. , vol.9 , pp. 15
- Garde, A.¹ Alderman, J.² Lane, W.³

9
- 33646948669
- (Maart, Leuven) Chap. 6
- S. Verhaverbeke: Dielectric Breakdown in Thermally Grown Oxide Layers (Maart, Leuven, 1993) Chap. 6, p. 105.
- (1993) Dielectric Breakdown in Thermally Grown Oxide Layers , pp. 105
- Verhaverbeke, S.¹

10
- 0028195438
- L. Bousse, S. Mostarshed, B. V. D. School and N. F. D. Rooij: Sens. Actuators B 17 (1994) 157.
- (1994) Sens. Actuators B , vol.17 , pp. 157
- Bousse, L.¹ Mostarshed, S.² School, B.V.D.³ Rooij, N.F.D.⁴

11
- 0035882133
- J. C. Chou and C. Y. Weng: Mater. Chem. Phys. 71 (2001) 120.
- (2001) Mater. Chem. Phys. , vol.71 , pp. 120
- Chou, J.C.¹ Weng, C.Y.²

12
- 19944396502
- C. M. Yang, C. S. Lai, C. Y. Wang, C. E. Lue, J. C. Chou, W. Y. Chung and D. G. Pijanowska: Microelectron. Eng. 80 (2005) 46.
- (2005) Microelectron. Eng. , vol.80 , pp. 46
- Yang, C.M.¹ Lai, C.S.² Wang, C.Y.³ Lue, C.E.⁴ Chou, J.C.⁵ Chung, W.Y.⁶ Pijanowska, D.G.⁷

13
- 0036997483
- Y. S. Ahn, S. H. Ban, K. J. Kim, S. Yang, Y. Roh and N. E. Lee: Jpn. J. Appl. Phys. 41 (2002) 7282.
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 7282
- Ahn, Y.S.¹ Ban, S.H.² Kim, K.J.³ Yang, S.⁴ Roh, Y.⁵ Lee, N.E.⁶

14
- 0037199904
- J. C. Chou and Y. F. Wang: Sens. Actuators B 86 (2002) 58.
- (2002) Sens. Actuators B , vol.86 , pp. 58
- Chou, J.C.¹ Wang, Y.F.²

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