Misoriented domain formation in 6H-SiC single crystal

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3573-3576

  Chen, Bo Yuan ^a,b   Liu, Xi ^a,b   Chen, Zhi Zhan ^a   Chang, Shao Hui ^a,b   Xiao, Bing ^a   Shi, Er Wei ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A1. Computer simulation; A1. Defects; A2. Single crystal growth; B2. Semiconducting materials

Indexed keywords

A1. COMPUTER SIMULATION; A1. DEFECTS; A2. SINGLE CRYSTAL GROWTH; AS-GROWN CRYSTAL; ATOMIC STRUCTURE; AXIAL GRADIENT; B2. SEMICONDUCTING MATERIALS; CRYSTAL PLANES; DOMAIN FORMATION; FORMATION MECHANISM; GROWTH FRONT; PHYSICAL VAPOR TRANSPORT; POLYTYPE; RAMAN SPECTRA; THERMAL INSULATORS;

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

SINGLE CRYSTALS;

EID: 67649861300     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.013     Document Type: Article

References (17)

1. Casady J.B., and Johnson R.W. Solid-State Electron. 39 (1996) 1409
2. Brylinski C. Diam. Relat. Mater. 6 (1997) 1405
3. Gupta A., Semenas E., Emorhokpor E., Chen J., Zwieback I., Souzis A., and Anderson T. Mater. Sci. Forum 527-529 (2006) 43
4. Nakabayashi M., Fujimoto T., Katsuno M., Ohtani N., Tsuge H., Yashiro H., Aigo T., Hoshino T., Hirano H., and Tatsumi K. Mater. Sci. Forum 600-603 (2009) 3
5. Yakimova R., Syväjärvi M., Tuominen M., Iakimov T., Råback P., Vehanen A., and Janzén E. Mater. Sci. Eng. B 61-62 (1999) 54
6. Yakimova R., Syväjärvi M., Iakimov T., Jacobsson H., Råback R., Vehanen A., and Janzén E. J. Cryst. Growth 217 (2000) 255
7. Schulze N., Barrett D.L., Pensl G., Rohmfeld S., and Hundhausen M. Mater. Sci. Eng. B 61-62 (1999) 44
8. Rost H.J., Schmidbauer M., Siche D., and Fornari R. J. Cryst. Growth 290 (2006) 137
9. Takahashi J., and Ohtani N. Phys. Status Solidi B 202 (1997) 163
10. Tuominen M., Yakimova R., Vehanen A., and Janzén E. Mater. Sci. Eng. B 57 (1999) 228
11. Rost H.J., Dolle J., Doerschel J., Siche D., Schulz D., and Wollweber J. J. Cryst. Growth 225 (2001) 317
12. Fujimoto T., Katsuno M., Ohtani N., Aigo T., and Yashiro H. Mater. Sci. Forum 389-393 (2002) 47
13. Seo S.H., Song J.S., Oh M.H., and Wang Y.Z. Mater. Sci. Forum 483-485 (2005) 43
14. Tupitsyn E.Y., Arulchakkaravarthi A., Drachev R.V., and Sudarshan T.S. J. Cryst. Growth 299 (2007) 70
15. Liu X., Shi E.W., Song L.X., and Chen Z.Z. J. Cryst. Growth 310 (2008) 4314
16. Nakashima S., and Harima H. Phys. Status Solidi A 162 (1997) 39
17. Kanaya M., Takahashi J., Fujiwara Y., and Moritani A. Appl. Phys. Lett. 58 (1991) 56