Growth related distribution of secondary phase inclusions in 6H-SiC single crystals

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 317-321

  Rost, H J ^a   Dolle, J ^a   Doerschel, J ^a   Siche, D ^a   Schulz, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Volume defects; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; MATHEMATICAL MODELS; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

SECONDARY PHASE INCLUSIONS;

SILICON CARBIDE;

EID: 0035335761     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00885-5     Document Type: Conference Paper

References (8)