4H polytype grain formation in PVT-grown 6H-SiC ingots

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 47-50

  Fujimoto, T ^a   Katsuno, M ^a   Ohtani, N ^a   Aigo, T ^a   Yashiro, H ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Crystal orientation; Multi domain ingot; X ray pole figure

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INGOTS; SILICON CARBIDE; SINGLE CRYSTAL SURFACES; X RAY ANALYSIS; SINGLE CRYSTALS;

MULTI DOMAIN INGOTS; PHYSICAL VAPOR TRANSPORT (PVT); SINGLE CRYSTAL MATRIX; CRYSTAL DIRECTION; GENERATION MECHANISM; GRAIN FORMATION; MICRO-STRUCTURAL OBSERVATIONS; MISORIENTED GRAINS; MULTI DOMAINS; PHYSICAL VAPOR TRANSPORT; X RAY POLE FIGURES;

GRAIN GROWTH; SILICON CARBIDE;

EID: 8744219862     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.47     Document Type: Article

References (5)

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3. M. Tuominen, et al., Materials Science and Engineering B, vol. 57, pp.228, 1999.
4. H.-J. Rost, et al., Journal of Crystal Growth, vol. 225, pp.317, 2001.
5. J. Takahashi, M. Kanaya, Y. Fujiwara, J. Cryst. Growth 135 (1994) p. 61.