Growth and characterization of large diameter 6H and 4H SiC Single Crystals

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 43-46

  Gupta, A ^a   Semenas, E ^a   Emorhokpor, E ^a   Chen, J ^a   Zwieback, I ^a   Souzis, A ^a   Anderson, T ^a  

^a II VI Inc   (United States)

Author keywords

4H SiC; 6H SiC; Semi insulating, micropipes; Sublimation growth

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; SILICON CARBIDE; SUBLIMATION; SUBSTRATES;

CRYSTAL QUALITY; MICROPIPES; SEMI-INSULATING PROPERTIES; SUBLIMATION GROWTH;

SINGLE CRYSTALS;

EID: 37849010285     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.43     Document Type: Conference Paper

References (4)

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4. D.L. Barrett et al., US Patent No. 5,611 (1997) p. 955