Seeded sublimation growth of 6H and 4H-SiC crystals

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 54-57

  Yakimova, R ^a,b   Syvajarvi M ^a   Tuominen, M ^a   Iakimov, T ^a   Raback P ^c   Vehanen, A ^d   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c Okmetic Oyj   (Finland)

^d IT Center for Science   (Finland)

Author keywords

4H SiC; Crystals; Instability; Morphology; Polytype; Sublimation

Indexed keywords

MICROPIPES;

CRYSTAL DEFECTS; HIGH TEMPERATURE EFFECTS; HYDROGEN; MORPHOLOGY; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBLIMATION; TEMPERATURE DISTRIBUTION;

CRYSTAL GROWTH;

EID: 0040357328     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00444-9     Document Type: Article

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