Effects of graphitization of the crucible on silicon carbide crystal growth

Journal of Crystal Growth

Volumn 310, Issue 19, 2008, Pages 4314-4318

  Liu, Xi ^a,b   Shi, Er Wei ^a   Song, Li Xin ^a   Chen, Zhi Zhan ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A1. Computer simulation; A1. Growth model; A2. Single crystal growth; B2. Semiconducting materials

Indexed keywords

AGRICULTURAL PRODUCTS; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; GRAPHITE; GRAPHITIZATION; SEED; SILICON; SILICON CARBIDE;

A1. COMPUTER SIMULATION; A1. GROWTH MODEL; A2. SINGLE CRYSTAL GROWTH; B2. SEMICONDUCTING MATERIALS; GRAPHITIZATION DEGREE;

CRUCIBLES;

EID: 51649083418     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.072     Document Type: Article

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