Silicon etch process options for micro- and nanotechnology using inductively coupled plasmas

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1170-1173

  Welch, C C ^a   Goodyear, A L ^a   Wahlbrink, T ^b   Lemme, M C ^b   Mollenhauer, T ^b  

^a OXFORD INSTRUMENTS PLASMA TECHNOLOGY   (United Kingdom)

^b AMO GMBH   (Germany)

Author keywords

ICP; Nanotechnology; Plasma etching; Silicon

Indexed keywords

ASPECT RATIO; INDUCTIVELY COUPLED PLASMA; MICROELECTRONICS; NANOTECHNOLOGY; PLASMA ETCHING;

FINE-DIMENSION PATTERNING; ICP; MICROELECTRONIC DEVICES; SILICON ETCH PROCESS;

SEMICONDUCTING SILICON;

EID: 33646045343     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.079     Document Type: Article

References (7)

1. http://www.physicsweb.org/article/world/13/8/9.
2. Notomi et al., Research Activities in NTT Basic Research Laboratories, vol. 11, August 2001, pp. 19-20.
3. Aroua W., et al. Eur. Phys. J. Appl. Phys. 17 3 (2002) 215-221
4. Wahlbrink T., Lemme M.C., et al. Microelectron. Eng. 78-79 (2005) 212-217
5. Goodyear A.L., Olynick D., et al. JVST B 18 6 (2000) 3471-3475
6. Ovchinnikov V., et al. Mater. Sci. Eng. B 69-70 (2000) 459-463
7. Rangelow I. J. Vac. Sci. Technol. A 21 4 (2003) 1550-1562