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Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

Electrical properties of AlGaN/GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy

(4) Shen, X Q a Okumura, H a Furuta, K b Nakamura, N c

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b R&D Association for Future Electron Devices (Japan)

c NIHON UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ANISOTROPIC PHENOMENON; ELECTRICAL PROPERTIES; MACROSTEP STRUCTURES; VICINAL SAPPHIRE;

HETEROJUNCTIONS;

EID: 33750446983 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2364864 Document Type: Article

Times cited : (23)

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