Gallium nitride futures and other stories

III-Vs Review

Volumn 19, Issue 1, 2006, Pages 20-24

  Cooke, Mike ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FREQUENCIES; INSULATED GATE BIPOLAR TRANSISTORS; MICROWAVES; MILITARY APPLICATIONS; MOS CAPACITORS; SILICON;

GALLIUM NITRIDE-BASED DEVICES; INSULATED GATE BIPOLAR (IGBT) TRANSISTORS; MICROWAVE FREQUENCIES;

GALLIUM NITRIDE;

EID: 33344458491     PISSN: 09611290     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0961-1290(06)71475-2     Document Type: Conference Paper

References (7)

1. "AlGaN/GaN Devices for Power Switching Systems", D. Ueda, et al., Matsushita Electric Industrial Co. Ltd., Nagoya Institute of Technology.
2. "A 36mm GaN-on-Si HFET Producing 368W with 70% Drain Efficiency", R. Therrien, et al., Nitronex Corporation.
3. "An Over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT Power Amplifier for W-CDMA Base Station Applications", M. Kanamura, et al., Fujitsu Laboratories Ltd.
4. "High Power, High Gain AlGaN/GaN HEMTs With Novel Powerbar Design", R. Lossy, et al., Ferdinand-Braun-Institut för Höchstfrequenztechnik.
5. "8-Watt GaN HEMTs at Millimeter-Wave Frequencies", Y.-F. Wu, et al., Cree Santa Barbara Technology Center and Cree Inc.
6. "380V/1.9A GaN Power-HEMT: Current Collapse Phenomena Under High Applied Voltage and Demonstration of 27.1 MHz Class-E Amplifier", W. Saito, et al., Toshiba Corporation.
7. "Non-Uniform Degradation Behavior Across Device Width in RF Power GaAs PHEMTs", A. A. Villanueva, et al., MIT, Mitsubishi Electric, Olin College.