Channel-carrier mobility parameters for 4H SiC MOSFETs

Microelectronics Reliability

Volumn 43, Issue 3, 2003, Pages 405-411

  Linewih, Handoko ^a   Dimitrijev, Sima ^a   Cheong, Kuan Yew ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TRAPS; HOLE TRAPS; INTERFACES (MATERIALS); SILICON CARBIDE;

INTERFACE-TRAP DENSITIES;

MOSFET DEVICES;

EID: 0037373234     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00313-X     Document Type: Conference Paper

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