Experimental demonstration of enhancement mode GaN MOSFETs

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 6, 2007, Pages 2064-2067

  Huang, W ^a   Chow, T P ^a   Khan, T ^a,b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING VOLTAGE; GATE GEOMETRIES; SAPPHIRE SUBSTRATES;

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; GATES (TRANSISTOR); SAPPHIRE; VOLTAGE CONTROL;

MOSFET DEVICES;

EID: 34547232670     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674918     Document Type: Conference Paper

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