Nanoscopic versus macroscopic C-V characterization of high-κ metal-oxide chemical vapor deposition ZrO2 thin films

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1055-1057

  Abermann, S ^a   Brezna, W ^a   Smoliner, J ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

C V characterization; High dielectrics; MOCVD; MOS devices; SCM; ZrO2

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ZIRCONIUM COMPOUNDS;

C-V-CHARACTERIZATION; HIGH-Κ-DIELECTRICS; SCM; ZRO2;

THIN FILMS;

EID: 33646025831     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.036     Document Type: Article

References (5)

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5. Brezna W., Schramboeck M., Lugstein A., Harasek S., Enichlmair H., Bertagnolli E., Gornik E., and Smoliner J. Appl. Phys. Lett. 83 (2003) 20