Photoluminescence of as-grown silicon nanocrystals embedded in silicon nitride: Influence of atomic hydrogen abundance

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 5, 2009, Pages 2902-2909

  Monroy, B M ^a   Santana, G ^a   Benami, A ^a   Ortiz, A ^a   Alonso, J C ^a   Fandino, J ^b   Cruz Gandarilla, F ^c   Aguilar Hernandez J ^c   Contreras Puente, G ^c   Lopez Suarez A ^a   Oliver, A ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE LA CIUDAD DE MÉXICO   (Mexico)

^c INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

Atomic hydrogen; PECVD; Photoluminescence; Quantum confinement; Silicon nanocrystals; Silicon nitride

Indexed keywords

AS-GROWN; ATOMIC HYDROGEN; DEPOSITION PROCESS; GENERAL TRENDS; HYDROGEN CONTENTS; HYDROGEN DILUTION; IN-SITU; PECVD; PHOTOLUMINESCENCE EMISSION; PHOTOLUMINESCENCE INTENSITIES; PLASMA REGION; RADIO FREQUENCIES; RADIO-FREQUENCY POWER; RED SHIFT; SILICON CONTENTS; SILICON NANOCRYSTALS; SILICON NITRIDE FILM; SILICON NITRIDE MATRIX;

ATOMIC SPECTROSCOPY; ATOMS; CHEMICAL STABILITY; EMISSION SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; MOLECULAR SPECTROSCOPY; NANOCRYSTALS; OPTICAL EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

AMORPHOUS SILICON;

EID: 67649217246     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.204     Document Type: Article

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